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Advanced Imaging
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Two-step growth of
β
-Ga
2
O
3
on
c
-plane sapphire using MOCVD for solar-blind photodetector
Peipei Ma
1,2
Jun Zheng
1,2,*
Xiangquan Liu
1,2
Zhi Liu
1,2
[ ... ]
Buwen Cheng
1,2
Author Affiliations
Abstract
1
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
In this work, a two-step metal organic chemical vapor deposition (MOCVD) method was applied for growing
β
-Ga
2
O
3
film on
c
-plane sapphire. Optimized buffer layer growth temperature (
T
B
) was found at 700 °C and the
β
-Ga
2
O
3
film with full width at half maximum (FWHM) of 0.66° was achieved. A metal?semiconductor?metal (MSM) solar-blind photodetector (PD) was fabricated based on the
β
-Ga
2
O
3
film. Ultrahigh responsivity of 1422 A/W @ 254 nm and photo-to-dark current ratio (PDCR) of 10
6
at 10 V bias were obtained. The detectivity of 2.5 × 10
15
Jones proved that the photodetector has outstanding performance in detecting weak signals. Moreover, the photodetector exhibited superior wavelength selectivity with rejection ratio (
R
250 nm
/
R
400 nm
) of 10
5
. These results indicate that the two-step method is a promising approach for preparation of high-quality
β
-Ga
2
O
3
films for high-performance solar-blind photodetectors.
MOCVD
two-step growth
β
-Ga
2
O
3
solar-blind photodetector
responsivity
PDF全文
Full Text
Journal of Semiconductors
2024, 45(2): 022502
Silicon Photonics
High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system
Jinlai Cui
1,2
Jun Zheng
1,2,*
Yupeng Zhu
1,2
Xiangquan Liu
1,2
[ ... ]
Buwen Cheng
1,2
Author Affiliations
Abstract
1
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn resonance cavity enhanced (RCE) photodetectors (PDs) with an active layer Sn component of
9
%
–
10.8
%
were designed and fabricated on an SOI substrate. The GeSn RCE PDs present a responsivity of 0.49 A/W at 2 μm and a 3-dB bandwidth of approximately 40 GHz at 2 μm. Consequently, Si-based 2 μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE detector. This work demonstrates the considerable potential of the Si-based 2 μm band photonics in future high-speed and high-capacity optical communication.
PDF全文
Full Text
Photonics Research
2024, 12(4): 767
75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique
Xiuli Li
1,2
Yupeng Zhu
1,2
Zhi Liu
1,2,*
Linzhi Peng
1,2
[ ... ]
Buwen Cheng
1,2
Author Affiliations
Abstract
1
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
High-performance germanium (Ge) waveguide photodetectors are designed and fabricated utilizing the inductive-gain-peaking technique. With the appropriate integrated inductors, the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity. Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed. In this work, the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated, which indicates the high-speed performance of photodetectors using the inductive-gain-peaking technique.High-performance germanium (Ge) waveguide photodetectors are designed and fabricated utilizing the inductive-gain-peaking technique. With the appropriate integrated inductors, the 3-dB bandwidth of photodetectors is significantly improved owing to the inductive-gain-peaking effect without any compromises to the dark current and optical responsivity. Measured 3-dB bandwidth up to 75 GHz is realized and clear open eye diagrams at 64 Gbps are observed. In this work, the relationship between the frequency response and large signal transmission characteristics on the integrated inductors of Ge waveguide photodetectors is investigated, which indicates the high-speed performance of photodetectors using the inductive-gain-peaking technique.
germanium
photodetectors
inductive-gain-peaking
optical interconnection
PDF全文
Full Text
Journal of Semiconductors
2023, 44(1): 012301
Silicon Photonics
Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors
Xiangquan Liu
1,2
Jun Zheng
1,2,*
Chaoqun Niu
1,2
Taoran Liu
1,2
[ ... ]
Buwen Cheng
1,2
Author Affiliations
Abstract
1
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
GeSn detectors have attracted a lot of attention for mid-infrared Si photonics, due to their compatibility with Si complementary metal oxide semiconductor technology. The GeSn bandgap can be affected by Sn composition and strain, which determines the working wavelength range of detectors. Applying the Sn content gradient GeSn layer structure, the strain of GeSn can be controlled from fully strained to completely relaxed. In this work, the strain evolution of GeSn alloys was investigated, and the effectiveness of gradually increasing Sn composition for the growth of high-Sn-content GeSn alloys was revealed. Relaxed GeSn thick films with Sn composition up to 16.3% were grown, and GeSn photodetectors were fabricated. At 77 K, the photodetectors showed a cutoff wavelength up to 4.2 μm and a peak responsivity of 0.35 A/W under 1 V at 2.53 μm. These results indicate that GeSn alloys grown on a Sn content gradient GeSn structure have promising application in mid-infrared detection.
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Full Text
Photonics Research
2022, 10(7): 07001567
大气与海洋光学
新型硅基IV族合金材料生长及光电器件研究进展(特邀)
下载:873次
郑军
1,2,*
刘香全
1,2
李明明
1,2
刘智
1,2
[ ... ]
成步文
1,2
作者单位
摘要
1
中国科学院半导体研究所 集成光电子学国家重点实验室,北京 100083
2
中国科学院大学 材料与光电研究中心,北京 100049
硅基IV族锗锡和锗铅合金材料带隙随组分可调,并可转变成直接带隙半导体材料,是研制硅基红外探测和发光器件的理想材料。本文首先介绍锗锡和锗铅材料外延生长工作,然后对锗锡光电器件的研究进展进行回顾和讨论。其中,随着锗锡合金中锡组分增加,锗锡光电探测器往高响应度和长探测截止波长方向发展;锗锡激光器的研究则集中在降低激射阈值、提高激射温度和电泵浦方面。本文还对锗铅材料和光电器件的研究进展进行简要介绍和展望。随着硅基高效光源和探测器研究的不断深入,IV族合金材料在硅基红外光电集成领域将继续展现重要的应用价值。
硅基光电子
锗锡
锗铅
探测器
激光器
Silicon photonics
Germanium tin
Germanium lead
Photodetector
Laser
PDF全文
Full Text
光子学报
2021, 50(10): 1004002
Silicon Photonics
Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates
Download:833次
Linzhi Peng
1,2
Xiuli Li
1,2
Zhi Liu
1,2,*
Xiangquan Liu
1,2
[ ... ]
Buwen Cheng
1,2,3
Author Affiliations
Abstract
1
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
Beijing Academy of Quantum Information Sciences, Beijing 100193, China
A horizontal
p
?
i
?
n
ridge waveguide emitter on a silicon (100) substrate with a
Ge
0.91
Sn
0.09
/
Ge
multi-quantum-well (MQW) active layer was fabricated by molecular beam epitaxy. The device structure was designed to reduce light absorption of metal electrodes and improve injection efficiency. Electroluminescence (EL) at a wavelength of 2160 nm was observed at room temperature. Theoretical calculations indicate that the emission peak corresponds well to the direct bandgap transition (
n
1
Γ
?
n
1
H
H
). The light output power was about 2.0 μW with an injection current density of
200
kA
/
cm
2
. These results show that the horizontal GeSn/Ge MQW ridge waveguide emitters have great prospects for group-IV light sources.
PDF全文
Full Text
Photonics Research
2020, 8(6): 06000899
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